[发明专利]低钴含量电极活性材料

权利要求书

1.低钴含量电极活性材料，其特征在于，所述电极活性材料由通式(I)表示：

Li_1+xMn_aNi_bO_2+x·Li_yCo_yO_2y·D*C (I)；

其中，x0，0y0.1，a+b＝1，1.2≤a/b≤3.3；D是不含钴元素的一种或多种混合的掺杂剂，可存在于或不存在于式(I)中；C是不含钴元素的一种或多种混合的包覆剂，可存在于或不存在于式(I)中。

2.根据权利要求1所述低钴含量电极活性材料，其特征在于，还包括以下特征中的任一项或多项：

a、Y_L≤y≤Y_H，且Y_L≤Y_H，其中Y_L和Y_H分别选自0.001,0.002,0.003,0.004,0.005,0.006,0.007,0.008,0.009,0.01,0.011,0.012,0.013,0.014,0.015,0.016,0.017,0.018,0.019,0.02,0.021,0.022,0.023,0.024,0.025,0.026,0.027,0.028,0.029,0.03,0.035,0.04,0.045,0.05,0.055,0.06,0.065,0.07,0.071,0.072,0.073,0.074,0.075,0.076,0.077,0.078,0.079,0.08,0.081,0.082,0.083,0.084,0.085,0.086,0.087,0.088,0.089,0.09,0.091,0.092,0.093,0.094,0.095,0.096,0.097,0.098和0.099；

b、0.01≤y≤0.07；

c、X_L≤x≤X_H，且X_L≤X_H，其中X_L和X_H分别选自0.1,0.15,0.2,0.28,0.3,0.35,0.375,0.4,0.43,0.45,0.5,0.55和0.6；

d、(a/b)_L≤a/b≤(a/b)_H，且(a/b)_L≤(a/b)_H，其中(a/b)_L和(a/b)_H选自1.2,1.3,1.4,1.5,1.6,1.7,1.8,1.9,2.05,2.1,2.2,2.3,2.4,2.5,2.6,2.7,2.8,2.9,3.0,3.1,3.2和3.3；

e、D和C分别选自M(₀－_0.1)氧化物、M(₀－_0.1)氟化物、M(₀－_0.1)的盐、M(₀－_0.1)的无机酸盐中的一种或多种混合，其中，M选自Li,Mg,Sr,Ba,Cd,Zn,Al,Ga,B,Zr,Ti,Ca,Ce,Y,Nb,Cr,Fe,Mo,W和V。

f、按照化学计量法计，D和C分别选自Al2O3,MgO,Cr2O3,SnO2,SrO2,ZnO,Nb2O5,ZrO2,TiO2,FeO,Fe3O4,AlF3,BF3,FeF3,CaF2,MgF2,B2O3,B2O5,LiF,SrF2,SnF2,ZnF2,CuF2,MnF2,NiF2,LiB3O5,Li3BO3,LiBO2,Li3B7O12,LiAlO2,Li2SiO3,Li8SiO6,LiPO3,Li3PO4,LiTi2(PO4)3,Li4Ti5O12,LiNbO3,Li3NbO4,Li2ZrO3,Li3TaO3,LiCr3O8,LiVO3,Li2MoO4,Li2Mo2O7,Li2TiO3,Li2WO4,LiTa3O8,Li4GeO4,LiFePO4和Fe2P2O7。